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2sk4107. sisil4d situs pdf 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4107 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0 33 (typ ) High forward transfer admittance : |Yfs| = 8 5 S (typ ) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2 0 to 4 0 V

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